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| BAR 64 ... W Silicon PIN Diode * High voltage current controlled RF resistor for RF attenuator and switches * Frequency range above 1 MHz * Low resistance and short carrier lifetime * For frequencies up to 3 GHz 3 2 1 VSO05561 BAR 64-04W BAR 64-05W BAR 64-06W Type BAR 64-04W BAR 64-05W BAR 64-06W Marking Ordering Code PPs PRs PSs Q62702-A1264 Q62702-A1265 Q62702-A1266 Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = C2 2 = C2 3 = C1/2 3 = A1/2 Package 3=C1/A2 SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S 115 C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 200 100 250 150 - 55 ...+150 - 55 ...+150 Unit V mA mW C VR IF Ptot Tj Top Tstg RthJA RthJS 300 140 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAR 64 ... W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. 50 1.1 Unit V(BR) IR VF 200 - V A mV I (BR) = 5 A Reverse current VR = 20 V Forward voltage I F = 50 mA AC characteristics Diode capacitance CT rf - 0.23 0.35 pF VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier life time rr - 12.5 2.1 0.85 1.55 1.2 20 2.8 1.35 s nH IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance Ls Semiconductor Group Semiconductor Group 22 Sep-04-1998 1998-11-01 BAR 64 ... W Forward current IF = f (TA*;TS) * mounted on alumina 140 5 mA 100 TS IF 80 TA 60 40 20 0 0 20 40 60 80 100 120 C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 K/W 10 2 IFmax / IFDC 10 2 - 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 tp tp Semiconductor Group Semiconductor Group 33 Sep-04-1998 1998-11-01 BAR 64 ... W Diode capacitance CT = f (V R) f = 1MHz Forward resistance rf = f(IF) f = 100MHz 10 3 Ohm 0.6 pF 10 2 0.4 CT RF 0.3 10 1 0.2 10 0 0.1 0.0 0 10 -1 -2 10 5 10 15 20 V 30 10 -1 10 0 10 1 10 2 mA 10 3 VR IF Forward current IF = f (V F) Intermodulation intersept point T A = parameter 10 3 mA IP3 = f (I F) f = parameter 10 2 5 f=900MHz 10 2 f=1800MHz 10 1 IP3 dBm IF 10 0 10 -1 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0 10 1 -1 10 10 0 mA 10 1 VF IF Semiconductor Group Semiconductor Group 44 Sep-04-1998 1998-11-01 |
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